sfh 4555 ir-lumineszenzdiode (850 nm) mit hoher ausgangsleistung high power infrared emitter (850 nm) lead (pb) free produc t - rohs compliant 2009-05-14 1 wesentliche merkmale ? infrarot led mit hoher ausgangsleistung ? kurze schaltzeiten anwendungen ? infrarotbeleuchtung fr cmos kameras ? sensorik ? datenbertragung sicherheitshinweise je nach betriebsart emi ttieren diese bauteile hochkonzentrierte, nicht sichtbare infrarot- strahlung, die gef?hrlich fr das menschliche auge sein kann. produkte, die diese bauteile enthalten, mssen gem?? den sicherheits- richtlinien der iec-normen 60825-1 und 62471 behandelt werden. typ type bestellnummer ordering code strahlst?rkegruppierung 1) ( i f = 100 ma, t p = 20 ms) radiant intensity grouping 1) i e (mw/sr) sfh 4555 q65110a7341 160 (typ. 500) 1) gemessen bei einem raumwinkel = 0.001 sr / measured at a solid angle of = 0.001 sr features ? high power infrared led ? short switching times applications ? infrared illumination for cmos cameras ? sensor technology ? data transmission safety advices depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. products which incorporate these devices have to follow the safety precautions given in iec 60825-1 and iec 62471.
2009-05-14 2 sfh 4555 grenzwerte ( t a = 25 c) maximum ratings bezeichnung parameter symbol symbol wert value einheit unit betriebs- und lagertemperatur operating and storage temperature range t op , t stg ? 40 + 100 c sperrspannung reverse voltage v r 5 v vorw?rtsgleichstrom forward current i f 100 ma sto?strom, t p = 10 s, d = 0 surge current i fsm 1.5 a verlustleistung power dissipation p tot 180 mw w?rmewiderstand sperrschicht - umgebung bei montage auf fr4 platine, padgr??e je 16 mm 2 thermal resistance junction - ambient mounted on pc-board (fr4), padsize 16 mm 2 each r thja 450 k/w kennwerte ( t a = 25 c) characteristics bezeichnung parameter symbol symbol wert value einheit unit wellenl?nge der strahlung wavelength at peak emission i f = 100 ma peak 860 nm centroid-wellenl?nge der strahlung centroid wavelength i f = 100 ma centroid 850 nm spektrale bandbreite bei 50% von i max spectral bandwidth at 50% of i max i f = 100 ma ? 42 nm abstrahlwinkel half angle ? 5 grad deg. aktive chipfl?che active chip area a 0.09 mm 2 abmessungen der aktiven chipfl?che dimension of the active chip area l b l w 0.3 0.3 mm2
sfh 4555 2009-05-14 3 schaltzeiten, i e von 10% auf 90% und von 90% auf 10%, bei i f = 100 ma, r l = 50 switching times, e from 10% to 90% and from 90% to 10%, i f = 100 ma, r l = 50 t r , t f 12 ns durchlassspannung forward voltage i f = 100 ma, t p = 20 ms i f = 1 a, t p = 100 s v f v f 1.5 ( < 1.8) 2.4 (< 3.0) v v sperrstrom reverse current i r not designed for reverse operation a gesamtstrahlungsfluss total radiant flux i f = 100 ma, t p = 20 ms e typ 50 mw temperaturkoeffizient von i e bzw. e , i f = 100 ma temperature coefficient of i e or e , i f = 100 ma tc i ? 0.5 %/k temperaturkoeffizient von v f , i f = 100 ma temperature coefficient of v f , i f = 100 ma tc v ? 0.7 mv/k temperaturkoeffizient von , i f = 100 ma temperature coefficient of , i f = 100 ma tc + 0.3 nm/k kennwerte ( t a = 25 c) characteristics (cont?d) bezeichnung parameter symbol symbol wert value einheit unit
2009-05-14 4 sfh 4555 abstrahlcharakteristik radiation characteristics i rel = f ( ? ) strahlst?rke i e in achsrichtung 1) gemessen bei einem raumwinkel = 0.001 sr radiant intensity i e in axial direction at a solid angle of = 0.001 sr bezeichnung parameter symbol werte values einheit unit sfh 4555 -bw sfh 4555 -cw sfh 4555 -dw strahlst?rke radiant intensity i f = 100 ma, t p = 20 ms i e min i e max 160 320 250 500 400 800 mw/sr mw/sr strahlst?rke radiant intensity i f = 1 a, t p = 100 s i e typ 1500 2000 3000 mw/sr 1) nur eine gruppe in einer verpackungs einheit (streuung kleiner 2:1) / only one group in one packing unit (variation lower 2:1) ohf03594 0? 20? 40? 60? 80? 100? 120? 0.4 0.6 0.8 1.0 100? 90? 80? 70? 60? 50? 0? 10? 20? 30? 40? 0 0.2 0.4 0.6 0.8 ?
sfh 4555 2009-05-14 5 relative spectral emission i rel = f ( ) forward current i f = f ( v f ) single pulse, t p = 20 s 700 0 nm % ohf04135 20 40 60 80 100 950 750 800 850 i rel ohl01713 f i 10 -4 0.5 1 1.5 2 2.5 v3 10 0 a 0 f v -1 10 5 5 10 -2 -3 5 10 radiant intensity single pulse, t p = 20 s permissible pulse handling capability i f = f ( ), t a = 25 c, duty cycle d = parameter i e i e 100 ma = f ( i f ) ohl01715 10 -3 ma 10 1 0 10 5 5 10 -1 -2 5 10 e e (100 ma) i i i f 0 10 1 10 2 10 3 10 55 0.05 2 1 0 -1 -2 -3 -4 -5 10 10 10 10 10 t p 10 10 s 10 0 0.1 0.005 0.02 0.01 d = t t a i f d = i p t f p t ohf02505 0.2 0.5 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.033 max. permissible forward current i f = f ( t a ), r thja = 450 k/w t ohr00880 0 f 0 20 40 60 80 100 ?c ma 25 50 75 100 125
2009-05-14 6 sfh 4555 ma?zeichnung package outlines ma?e in mm (inch) / dimensions in mm (inch). empfohlenes l?tpaddesign wellenl?ten ttw recommended solder pad design ttw soldering ma?e in mm (inch) / dimensions in mm (inch). 4 (0.157) ohlpy985 4.8 (0.189) anode
sfh 4555 2009-05-14 7 l?tbedingungen soldering conditions wellenl?ten (ttw) (nach cecc 00802) ttw soldering (acc. to cecc 00802) published by osram opto semico nductors gmbh leibnizstra?e 4, d-93055 regensburg www.osram-os.com ? all rights reserved. the information describes the type of component and shall not be considered as assured characteristics. terms of delivery and rights to change design reserv ed. due to technical requirements components may contain dangerous substances. for information on the types in question please contact our sales organization. packing please use the recycling operators known to you. we can also help you ? get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of tr ansport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or system s must be expressly authorized for such purpose! critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of osram os. 1 a critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support de vice or system, or to affect its safety or effectiveness of that device or system. 2 life support devices or systems are intended (a) to be impl anted in the human body, or (b) to support and/or maintain and sustain human life. if they fail, it is reasonable to assume that the health of the user may be endangered. ohly0598 0 0 50 100 150 200 250 50 100 150 200 250 300 t t c s 235 c 10 s c ... 260 1. welle 1. wave 2. welle 2. wave 5 k/s 2 k/s ca 200 k/s cc ... 130 100 2 k/s zwangskhlung forced cooling normalkurve standard curve grenzkurven limit curves
mouser electronics related product links 720-SFH4555 - osram opto semiconductor sfh 4555
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